双光束相干控制产生多次谐波的实验验证

利用两束相干度可改变的飞秒脉冲光对产生的五次谐波的强度特性进行了研究，发现谐波信号的强度随相干程度的增大而增加，谐波信号的最大值相对于相干零点(双光束相干度最大处)是非对称的，从而证明了合成的激光脉冲波形变化对谐波信号的影响.同时对谐波的受激放大理论进行了初步的实验探索和展望. 关键词： 五次谐波 波形变化 相干 受激放大     

Extremal Convex Planar Sets

Each convex planar set K has a perimeter C, a minimum width E, an area A, and a diameter D. The set of points (E,C, A^1/2, D) corresponding to all such sets is shown to occupy a cone in the non-negative orthant of R⁴with its vertex at the origin. Its three-dimensional cross section S in the plane D = 1 is investigated. S lies in a rectangular parallelepiped in R³. Results of Lebesgue, Kubota, Fukasawa, Sholander, and Hemmi are used to determine some of the boundary surfaces of S, and new results are given for the other boundary surfaces. From knowledge of S, all inequalities among E, C ,A, and D can be found.     

Electron–hole recombination luminescence in LiYF4:U single crystal

Photoluminescence (PL), photostimulated luminescence (PSL), thermally stimulated luminescence (TSL) and electron paramagnetic resonance (EPR) studies were carried out on LiYF₄:U⁴⁺ and pure LiYF₄ crystals. The PL and EPR investigations have identified the presence of Eu³⁺, Tb³⁺ and Gd³⁺ ions in both of these crystals possibly due to their existence in the starting materials. The luminescence observed during afterglow, PSL and TSL revealed that emission occurs at wavelength positions 382, 413, 437 and 544 nm, which are characteristic of Tb³⁺ ions. The present investigations using PSL and TSL in combination with PL studies before and after gamma irradiation have revealed that selective energy transfer to Tb³⁺ ions occurs during electron–hole recombination processes like PSL and TSL. Even though other luminescent ions (U⁴⁺ and Eu³⁺) are present in the system and U⁴⁺/U³⁺ ions are participating in electron capture/release processes, the selective energy transfer results in Tb³⁺ ions acting as luminescence centers.     

Decay distribution of spontaneous emission from atoms in one-dimensional photonic crystal

Spontaneous emission behavior from atoms (or molecules) in one-dimensional photonic crystal with a defect is investigated. Taken all the TE and TM modes into account, the normalized spontaneous emission rate of the atom is calculated as a function of the position of the atom in the crystal. Results for both nonabsorbing dielectric structure and absorbing dielectric structure are presented. With the increase of the thickness of the defect in which the atoms are embedded, the oscillations of the spontaneous emission rate versus the position of the atom become dense and the lifetime distribution becomes narrow and sharp. The PC effect may lead to the coexistence of both accelerated and inhibited decay processes.     

Simple Entanglement Measure for Multipartite Pure States

A simple entanglement measure for multipartite pure states is formulated based on the partial entropy of a series of reduced density matrices. Use of the proposed new measure to distinguish disentangled, partially entangled, and maximally entangled multipartite pure states is illustrated.     

某些类氖离子和类镍离子等离子体状态对应关系的研究

利用一维拉格朗日流体动力学程序Med103详细研究了产生类镍Ag,Cd,In,Sn, Sb离子和类氖Fe,Co,Ni,Cu,Zn离子的等离子体状态.通过对电子温度、离子丰度、离子数密度等状态参量的分析比较，得到了这两类等离子体状态之间的对应关系.即类镍银的等离子体状态与类氖铁 的相近，类镍镉的与类氖钴的相近，依次类推.利用这一对应关系可以方便地由类氖机理x射线激光的等离子体状态来对相应元素的类镍x射线激光的等离子体状态进行判断. 关键词： 类氖 类镍 等离子体状态 x射线激光     

Enhancement of the Kerr effect for a quantum dot in a cavity

Nonlinear susceptibility of a quantum dot (QD) embedded in a two-sided cavity, is studied theoretically from a weak-coupling to a strong-coupling regime. In the relevance of a quantum logic gate, the corresponding nonlinear phase shifts (Kerr effect) are estimated for coherent wavepackets including one photon on average. In the weak-coupling regime, the phase shift enhances strongly as a function of a coupling constant between the cavity photon and QD, and eventually saturates in the strong-coupling regime. We also show transmission spectra to evaluate the efficiency of the phase shift. Although the efficiency decreases monotonically in the weak-coupling regime, it rises in the strong-coupling regime.     

用数值方法分析微孔激光器出射光的近场特性

微孔激光器作为应用于近场光信息存储系统中的一种新型光源，它的出射光斑的近场特性对于近场光存储是十分重要的。针对纳米孔径运用角谱进行Fox-Li数值迭代，得到不同孔径微孔激光器的基模光强分布，然后运用二维非线性时域有限差分法分析微孔激光器出射端即微孔金属膜的近场光学性质，模拟计算了不同孔径和厚度的微孔金属膜的光强近场分布，从应用于近场光存储的角度，给出反映其近场光学特性的相关数据。发现由于TM模式下金属存在局域表面等离子增强效应，使得其出射强度比TE模式高一个数量级，从而更适于作为实际中近场光存储系统和原理试验的光学头。     

Analytical study of a flattened Gaussian beam through multi-apertured optical imaging systems of B = 0

By using the methods of the matrix decomposition and expansion of the hard-edged aperture function into a finite sum of complex Gaussian functions, the recurrence propagation expressions for a flattened Gaussian beam (FGB) through multi-apertured optical imaging systems of B = 0 are derived and illustrated with numerical examples. Comparisons with the straightforward numerical integration of the Collins formula and with the previous work are made. It is shown that the main advantages of our methods and results are the more accuracy and great reduction of computer time.     

Si微电阻桥温度分布与热传导特性的显微Raman光谱研究

采用显微Raman光谱方法对红外目标模拟器中重掺杂Si微电阻桥单元的热传导特性进行研究，根据Si桥的实际特性建立相应的Raman散射模型，通过测量Raman峰位的移动得到高功率激光辐照下测量点的温度.对Si桥桥面分别进行了沿某些特殊线段的逐点线扫描和覆盖全部桥面的面扫描，得到各点的温升及其分布.用基于有限元分析的软件结合Si桥结构参数对各测量点的温升进行了模拟计算，其结果在热导分布的基本趋势上与实验相一致.实验细致地揭示了热导分布的局域起伏，反映出实际器件的不均匀性，为改进器件设计、优化器件性能提供了实验依据. 关键词： Raman光谱 Si桥 温度分布 热导